Pure Si at 300 K has equal electron (ne) and hole (nh) concentration of 1.5 * 10^16 m^-3. Doping by indium increases nh to 4.5 * 10^22 m^-3. Calculate ne in the doped silicon.

Sahay Sir > Question Answers > Pure Si at 300 K has equal electron (ne) and hole (nh) concentration of 1.5 * 10^16 m^-3. Doping by indium increases nh to 4.5 * 10^22 m^-3. Calculate ne in the doped silicon.
Pure Si at 300 K has equal electron (ne) and hole (nh) concentration of 1.5 * 10^16 m^-3. Doping by indium increases nh to 4.5 * 10^22 m^-3. Calculate ne in the doped silicon.
12
Sep
Pure Si at 300 K has equal electron (ne) and hole (nh) concentration of 1.5 * 10^16 m^-3. Doping by indium increases nh to 4.5 * 10^22 m^-3. Calculate ne in the doped silicon. Pure Si at 300 K has equal electron (ne) and hole (nh) concentration of 1.5 * 10^16 m^-3. Doping by indium [...]
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