one indium atom per 5 * 10^7 silicon atoms. If the number density of atoms in the silicon specimen is
Sahay Sir > Question Answers > one indium atom per 5 * 10^7 silicon atoms. If the number density of atoms in the silicon specimen is
Zener breakdown in a semiconductor diode occurs when (1) forward current exceeds certain value (2) reverse bias exceeds certain value (3) forward bias exceeds certain value (4) potential barrier is reduced to zero.
21
Oct
Zener breakdown in a semiconductor diode occurs when (1) forward current exceeds certain value (2) reverse bias exceeds certain value (3) forward bias exceeds certain value (4) potential barrier is reduced to zero. A silicon specimen is made into a P-type semiconductor by doping On an average one indium atom per 5 * 10^7 silicon [...]
The reverse biasing in a pn junction diode (1) decreases the potential barrier (2) increases the potential barrier (3) increases the number of minority charge carriers (4) increases the number of majority charge carriers.
21
Oct
The reverse biasing in a pn junction diode (1) decreases the potential barrier (2) increases the potential barrier (3) increases the number of minority charge carriers (4) increases the number of majority charge carriers. A silicon specimen is made into a P-type semiconductor by doping On an average one indium atom per 5 * 10^7 [...]
A silicon specimen is made into a P-type semiconductor by doping, on an average, one indium atom per 5 * 10^7 silicon atoms. If the number density of atoms in the silicon specimen is
21
Oct
A silicon specimen is made into a P-type semiconductor by doping, on an average, one indium atom per 5 * 10^7 silicon atoms. If the number density of atoms in the silicon specimen is A silicon specimen is made into a P-type semiconductor by doping On an average one indium atom per 5 * 10^7 [...]