Uncategorised (JEE Advanced Physics by BM Sharma + GMP Solutions)
In the circuit shown in Fig. A conducting wire HE is moved with a constant speed v towards left. The complete circuit is placed in a uniform magnetic field B perpendicular to the plane of circuit inwards. The current in HKDE is
20
Oct
In the circuit shown in Fig. A conducting wire HE is moved with a constant speed v towards left. The complete circuit is placed in a uniform magnetic field B perpendicular to the plane of circuit inwards. The current in HKDE is -q A metallic square loop PQRS is moving in its own plane with [...]
In an unbiased p-n junction, holes diffuse from the p-region to n-region because
20
Oct
In an unbiased p-n junction, holes diffuse from the p-region to n-region because holes diffuse from the p-region to n-region because In an unbiased p-n junction October 20, 2020 Category: Uncategorised (JEE Advanced Physics by BM Sharma + GMP Solutions) ,
The wire shown in is bent in the shape of a tent, with θ = 60.0∘ and L = 1.50 m, and placed in a uniform magnetic field of magnitude 0.300T perpendicular to the tabletop. The wire is rigid but hinged at points aandb. If the tent is flattened out on the table in 0.100 s, what is the average induced emf in the wire during this time?
20
Oct
The wire shown in is bent in the shape of a tent, with θ = 60.0∘ and L = 1.50 m, and placed in a uniform magnetic field of magnitude 0.300T perpendicular to the tabletop. The wire is rigid but hinged at points aandb. If the tent is flattened out on the table in 0.100 [...]
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and placed in a uniform magnetic field of magnitude 0.300T perpendicular to the tabletop. The wire is rigid but hinged at points aandb. If the tent is flattened out on the table in 0.100 s ,
The wire shown in is bent in the shape of a tent ,
what is the average induced emf in the wire during this time? ,
with θ = 60.0∘ and L = 1.50 m ,
Carbon, silicon and germanium have four valence electrons each. These are characterized by valence and conduction bands separated by energy band gap respectively equal to
20
Oct
Carbon, silicon and germanium have four valence electrons each. These are characterized by valence and conduction bands separated by energy band gap respectively equal to Carbon silicon and germanium have four valence electrons each. These are characterized by valence and conduction bands separated by energy band gap respectively equal to October 20, 2020 Category: Uncategorised [...]
Figure shows a conducting circular loop of radius a placed in a uniform, perpendicular magnetic field B. A thick metal rod OA is pivoted at the centre O. The other end fo the rod touches the loop at A. The centre O and a fixed point C on the loop are connected by a wire OC of resistance R. A force is applied at the middle point of the rod OA perpendicularly so that the rod rotates clockwise at a uniform angular-velocity ω. Suppose the wire connecting O and C has zero resistance but the circular loop has a resistance R uniformly distributed along its length. The rod OA is made to rotate with a uniform angular speed ω as shown in the figure. Find the force.
20
Oct
Figure shows a conducting circular loop of radius a placed in a uniform, perpendicular magnetic field B. A thick metal rod OA is pivoted at the centre O. The other end fo the rod touches the loop at A. The centre O and a fixed point C on the loop are connected by a wire [...]
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-q ,
A metallic square loop PQRS is moving in its own plane with velocity v in a uniform magnetic field perpendicular to its plane as shown in Fig. If VP ,
Figure shows a conducting circular loop of radius a placed in a uniform ,
R and S then which of the following is an incorrect statement? ,
VQ ,
VRandVS are the potentials of points P ,
Which of the statements given in previous problem is true for p-type semiconductors.
20
Oct
Which of the statements given in previous problem is true for p-type semiconductors. Which of the statements given in previous problem is true for p-type semiconductors. October 20, 2020 Category: Uncategorised (JEE Advanced Physics by BM Sharma + GMP Solutions) ,
In an n-type silicon, which of the following statement is true ? (a) Electrons are majority carriers and trivalent atoms are the dopants. (b) Electrons are minority carriers and pentavalent
20
Oct
In an n-type silicon, which of the following statement is true ? (a) Electrons are majority carriers and trivalent atoms are the dopants. (b) Electrons are minority carriers and pentavalent In an n-type silicon which of the following statement is true ? (a) Electrons are majority carriers and trivalent atoms are the dopants. (b) Electrons [...]
Determine the number density of donor atoms which have to be added to an intrinsic germanium semiconductor to produce an n-type semi-conductor of conductivity 5 ohm/cm
20
Oct
Determine the number density of donor atoms which have to be added to an intrinsic germanium semiconductor to produce an n-type semi-conductor of conductivity 5 ohm/cm Determine the number density of donor atoms which have to be added to an intrinsic germanium semiconductor to produce an n-type semi-conductor of conductivity 5 ohm/cm October 20, 2020 [...]
Energy of the photon of sodium light of wavelength 5,890 A equals the energy gap between valence and conduction band of a semiconductor. Find the minimum energy E required to
20
Oct
Energy of the photon of sodium light of wavelength 5,890 A equals the energy gap between valence and conduction band of a semiconductor. Find the minimum energy E required to 890 A equals the energy gap between valence and conduction band of a semiconductor. Find the minimum energy E required to Energy of the photon [...]
A doped semiconductor has impurity levels 40 meV (millielectron volt) below the conduction band, (a) Is the material n-type or p-type? (b) In a thermal collision, an amount of energy KT
20
Oct
A doped semiconductor has impurity levels 40 meV (millielectron volt) below the conduction band, (a) Is the material n-type or p-type? (b) In a thermal collision, an amount of energy KT (a) Is the material n-type or p-type? (b) In a thermal collision A doped semiconductor has impurity levels 40 meV (millielectron volt) below the [...]