Uncategorised (JEE Advanced Physics by BM Sharma + GMP Solutions)
In the following diagrams, indicate which of the diodes are forward biased and which are reverse biased.
12
Sep
In the following diagrams, indicate which of the diodes are forward biased and which are reverse biased. In the following diagrams indicate which of the diodes are forward biased and which are reverse biased. September 12, 2020 Category: Uncategorised (JEE Advanced Physics by BM Sharma + GMP Solutions) ,
In figure, a battery of emf 2 V is used. The length of the block is 0.1 m and the area is 1 * 10^4 m^2. If the block is of intrinsic silicon at 300 K, find the electron and hole currents. What will be magnitude of the total current
12
Sep
In figure, a battery of emf 2 V is used. The length of the block is 0.1 m and the area is 1 * 10^4 m^2. If the block is of intrinsic silicon at 300 K, find the electron and hole currents. What will be magnitude of the total current a battery of emf 2 [...]
A semiconductor is known to have an electron concentration of 8 * 10^13 cm^-3 and a hole concentration of 5 * 10^12 cm^-3. (a) Is the semiconductor n-type or p-type?
12
Sep
A semiconductor is known to have an electron concentration of 8 * 10^13 cm^-3 and a hole concentration of 5 * 10^12 cm^-3. (a) Is the semiconductor n-type or p-type? A semiconductor is known to have an electron concentration of 8 * 10^13 cm^-3 and a hole concentration of 5 * 10^12 cm^-3. (a) Is [...]
When one of the slits of Young’s experiment is covered with a transparent sheet of thickness 4.8 mm, the central fringe shifts to a position originally occupied by the 30th bright fringe. What should be the thickness of the sheet if the central fringe has to shift to the position occupied by 20th bright fringe?
12
Sep
When one of the slits of Young’s experiment is covered with a transparent sheet of thickness 4.8 mm, the central fringe shifts to a position originally occupied by the 30th bright fringe. What should be the thickness of the sheet if the central fringe has to shift to the position occupied by 20th bright fringe? [...]
Pure Si at 300 K has equal electron (ne) and hole (nh) concentration of 1.5 * 10^16 m^-3. Doping by indium increases nh to 4.5 * 10^22 m^-3. Calculate ne in the doped silicon.
12
Sep
Pure Si at 300 K has equal electron (ne) and hole (nh) concentration of 1.5 * 10^16 m^-3. Doping by indium increases nh to 4.5 * 10^22 m^-3. Calculate ne in the doped silicon. Pure Si at 300 K has equal electron (ne) and hole (nh) concentration of 1.5 * 10^16 m^-3. Doping by indium [...]
A flake of glass (refractive index 1.5) is placed over one of the opening of a double-slit apparatus. The interference pattern displaced itself through seven successive maxima toward the side where the flake is placed. If wavelength of the light is λ = 600 nm, then the thickness of the flake is
12
Sep
A flake of glass (refractive index 1.5) is placed over one of the opening of a double-slit apparatus. The interference pattern displaced itself through seven successive maxima toward the side where the flake is placed. If wavelength of the light is λ = 600 nm, then the thickness of the flake is In Young's double [...]
Light of wavelength 500 nm is used to form interference pattern in Young’s double slit experiment. A uniform glass plate of refractive index 1.5 and thickness 0.1mm is introduced in the path of one of the interfering beams. The number of fringes which will shift the cross wire due to this is
12
Sep
Light of wavelength 500 nm is used to form interference pattern in Young’s double slit experiment. A uniform glass plate of refractive index 1.5 and thickness 0.1mm is introduced in the path of one of the interfering beams. The number of fringes which will shift the cross wire due to this is In Young's double [...]
In Young’s double slit experiment, the fringes are displaced index 1.5 is introduced in the path of one of the beams. When this plate in replaced by another plate of the same thickness, the shift of fringes is (3/2)x. The refractive index of the second plate is
12
Sep
In Young’s double slit experiment, the fringes are displaced index 1.5 is introduced in the path of one of the beams. When this plate in replaced by another plate of the same thickness, the shift of fringes is (3/2)x. The refractive index of the second plate is In Young's double slit experiment the fringes are [...]
Suppose a pure Si crystal has 5 * 10^28 atoms/m^3 at room temperature. It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes.
12
Sep
Suppose a pure Si crystal has 5 * 10^28 atoms/m^3 at room temperature. It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Suppose a pure Si crystal has 5 * 10^28 atoms/m^3 at room temperature. It is doped by 1 ppm concentration of pentavalent As. Calculate the [...]
A semiconductor object has acceptor energy levels 54 meV (millielectron volt) above the valence band. Find the maximum wavelength of the radiation, which can create a hole?
12
Sep
A semiconductor object has acceptor energy levels 54 meV (millielectron volt) above the valence band. Find the maximum wavelength of the radiation, which can create a hole? A semiconductor object has acceptor energy levels 54 meV (millielectron volt) above the valence band. Find the maximum wavelength of the radiation which can create a hole? September [...]