The reverse biasing in a pn junction diode (1) decreases the potential barrier (2) increases the potential barrier (3) increases the number of minority charge carriers (4) increases the number of majority charge carriers. A silicon specimen is made into a P-type semiconductor by doping On an average one indium atom per 5 * 10^7 silicon atoms. If the number density of atoms in the silicon specimen is October 21, 2020 Category: Uncategorised (JEE Advanced Physics by BM Sharma + GMP Solutions) , Facebook Messenger WhatsApp Share this:TwitterFacebook Related