A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly September 1, 2020 Category: Chapter 33 - Semiconductors , NEET Last 32 Years Solved 1988 - 2019 Physics and Chemistry Video Solutions , Physics , Facebook Messenger WhatsApp Share this:TwitterFacebook Related