A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength September 1, 2020 Category: Chapter 33 - Semiconductors , NEET Last 32 Years Solved 1988 - 2019 Physics and Chemistry Video Solutions , Physics , Facebook Messenger WhatsApp Share this:TwitterFacebook Related
